{"product_id":"electrical-activation-studies-of-ion-james-a-fellows-9781249829904","title":"Electrical Activation Studies of Ion Implanted Gallium Nitride","description":"A comprehensive and systematic electrical activation study of Si-implanted gallium nitride (GaN) was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, acceptor-implanted GaN was also investigated. Temperature-dependent Hall effect measurements from 10-800 K and photoluminescence (PL) spectra taken from 3-300 K were used to characterize the samples. GaN wafers capped with 500 ? A1N were implanted at room temperature and at 800 oC with 200 keV Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 oC for 5 min to 17 sec in a flowing nitrogen environment.\u003cbr\u003e\u003cbr\u003e\u003cb\u003eAuthor:\u003c\/b\u003e James A. Fellows\u003cbr\u003e\u003cb\u003eISBN-10:\u003c\/b\u003e 1249829909\u003cbr\u003e\u003cb\u003eISBN-13:\u003c\/b\u003e 9781249829904\u003cbr\u003e\u003cb\u003ePublisher:\u003c\/b\u003e Biblioscholar\u003cbr\u003e\u003cb\u003eLanguage:\u003c\/b\u003e English\u003cbr\u003e\u003cb\u003ePublished:\u003c\/b\u003e 10\/17\/2012\u003cbr\u003e\u003cb\u003ePages:\u003c\/b\u003e 224\u003cbr\u003e\u003cb\u003eFormat:\u003c\/b\u003e Paperback\u003cbr\u003e\u003cb\u003eWeight:\u003c\/b\u003e 0.90lbs\u003cbr\u003e\u003cb\u003eSize:\u003c\/b\u003e 9.69h x 7.44w x 0.47d","brand":"James A. Fellows","offers":[{"title":"Paperback","offer_id":47611150270719,"sku":"9781249829904","price":57.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0662\/2982\/9887\/files\/img_de6e6115-ada0-4388-932d-9f1f75d5c063.jpg?v=1764512061","url":"https:\/\/www.whiterainbookhouse.com\/products\/electrical-activation-studies-of-ion-james-a-fellows-9781249829904","provider":"WR Book House","version":"1.0","type":"link"}