{"product_id":"luminescence-studies-of-ion-implanted-gallium-erin-n-claunch-9781288405916","title":"Luminescence Studies of Ion-Implanted Gallium Nitride and Alluminum Gallium Nitride","description":"Recently, research on the wide bandgap semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature. The ions were implanted at 200 keV with doses ranging from 1x10 13 to 1x10 15 cm -2 at room temperature. The samples were proximity cap annealed from 1200 to 1350 [degrees] C with a 500 Å thick AlN cap in a nitrogen environment. It has been found that the optical activation and implantation damage recovery are highly dependent upon ion dose and anneal temperature. The results of luminescence measurements on AlxGa1-xN made at 5 K by both photoluminescence and cathodoluminescence show that nearly complete implantation damage recovery can only be obtained after annealing at 1350 [degrees] C. The Si+N implanted GaN showed only a small amount of optical activation in the cathodoluminescence measurements at 1250 to 1350 [degrees] C. Mg doped GaN results indicated that optical activation of the Mg ions was not prevalent, and ion implantation damage might not have been removed completely at 1350 [degrees] C. The results also indicate that current AlN cap protected the implanted AlxGa1-xN layer very well during high temperature annealing without creating any significant annealing damage. These luminescence observations are consistent with the results of electrical activation studies made on these samples.\u003cbr\u003e\u003cbr\u003e\u003cb\u003eAuthor:\u003c\/b\u003e Erin N. Claunch\u003cbr\u003e\u003cb\u003eISBN-10:\u003c\/b\u003e 128840591X\u003cbr\u003e\u003cb\u003eISBN-13:\u003c\/b\u003e 9781288405916\u003cbr\u003e\u003cb\u003ePublisher:\u003c\/b\u003e Biblioscholar\u003cbr\u003e\u003cb\u003eLanguage:\u003c\/b\u003e English\u003cbr\u003e\u003cb\u003ePublished:\u003c\/b\u003e 12\/05\/2012\u003cbr\u003e\u003cb\u003ePages:\u003c\/b\u003e 70\u003cbr\u003e\u003cb\u003eFormat:\u003c\/b\u003e Paperback\u003cbr\u003e\u003cb\u003eWeight:\u003c\/b\u003e 0.31lbs\u003cbr\u003e\u003cb\u003eSize:\u003c\/b\u003e 9.69h x 7.44w x 0.15d","brand":"Erin N. Claunch","offers":[{"title":"Paperback","offer_id":47611349139711,"sku":"9781288405916","price":57.95,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0662\/2982\/9887\/files\/img_c439f40c-8881-4be3-b574-051afaaaead1.jpg?v=1764513315","url":"https:\/\/www.whiterainbookhouse.com\/products\/luminescence-studies-of-ion-implanted-gallium-erin-n-claunch-9781288405916","provider":"WR Book House","version":"1.0","type":"link"}