{"product_id":"physical-and-technical-problems-of-jean-pierre-colinge-9780792336006","title":"Physical and Technical Problems of Soi Structures and Devices","description":"Preface. Contributors. SOI materials: Low dose SIMOX for ULSI applications; A.J. Auberton-Hervé, et al. Why porous silicon for SOI? V.P. Bondarenko, A.M. Dorofeev. Defect engineering in SOI films prepared by zone-melting recrystallization; E.I. Givargizov, et al. Ion beam processing for SOI; W. Skorupa. Semi-insulating oxygen-doped silicon by low temperature chemical vapor deposition for SOI applications; J.C. Sturm, et al. Direct formation of thin film nitride structures by high intensity ion implantation of nitrogen into silicon; R. Yankov, F. Komarov. Stimulated technology for implanted SOI formation; V.G. Litovchenko, et al. Behaviour of oxygen and nitrogen atoms sequentially implanted into silicon; A.B. Danilin. SOI fabrication by silicon wafer bonding with the help of glass-layer fusion; N.I. Koshelev, et al. Crystallization of a-Si films on glasses by multipulse- excimer-laser technique; A.B. Limanov. Microzone laser recrystallized polysilicon layers on insulator; A.A. Druzhinin, et al. SOI materials characterization techniques: Electrical characterization techniques for SOI materials and devices; S. Christoloveanu. The defect structure of buried oxide layers in SIMOX and BESOI structures; A.G. Revesz, H.L. Hughes. IR study of buried layer structure on different stages of technology; V.G. Litovchenko, et al. Optical investigation of silicon implanted with high doses of oxygen and hydrogen ions; P.A. Aleksandrov, et al. Electrical properties of ZMR SOI structures: characterization techniques and experimental results; T.E. Rudenko et al. SOI Devices: Fabrication and characterisation of poly-Si TFTs on glass; S.D. Brotherton, et al. Hot carrier reliability of SOI structures; D.E. Ioannou. NovelTESC bipolar transistor approach for a thin-film SOI substrate; C.J. Patel, et al. Problems of radiation hardness of SOI structures and devices; A.N. Nazarov. Fabrication of SIMOX structures and ICs test elements; G.G. Voronin, et al. Low-frequency noise characterization of SOI depletion-mode p- MOSFETS; N.B. Lukyanchikova, et al. SOI circuits: SOI devices and circuits: an overview of potentials and problems; J.-P. Colinge. 1.2 \u0026amp;mgr; CMOS\/SOI on porous silicon; V.P. Bondarenko, et al. SOI pressure sensors based on laser recrystallized polysilicon; V.A. Voronin, et al. Index.\u003cbr\u003e\u003cbr\u003e\u003cb\u003eAuthor:\u003c\/b\u003e Jean-Pierre Colinge\u003cbr\u003e\u003cb\u003eISBN-10:\u003c\/b\u003e 0792336003\u003cbr\u003e\u003cb\u003eISBN-13:\u003c\/b\u003e 9780792336006\u003cbr\u003e\u003cb\u003ePublisher:\u003c\/b\u003e Kluwer Academic Publishers\u003cbr\u003e\u003cb\u003eLanguage:\u003c\/b\u003e English\u003cbr\u003e\u003cb\u003ePublished:\u003c\/b\u003e 06\/30\/1995\u003cbr\u003e\u003cb\u003ePages:\u003c\/b\u003e 304\u003cbr\u003e\u003cb\u003eFormat:\u003c\/b\u003e Hardcover\u003cbr\u003e\u003cb\u003eWeight:\u003c\/b\u003e 1.33lbs\u003cbr\u003e\u003cb\u003eSize:\u003c\/b\u003e 9.21h x 6.14w x 0.69d","brand":"Jean-Pierre Colinge","offers":[{"title":"Hardcover","offer_id":47422646681855,"sku":"9780792336006","price":99.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0662\/2982\/9887\/files\/img_e4f7adba-3039-471f-b738-f309b1b07de3.jpg?v=1761527881","url":"https:\/\/www.whiterainbookhouse.com\/products\/physical-and-technical-problems-of-jean-pierre-colinge-9780792336006","provider":"WR Book House","version":"1.0","type":"link"}