Electrical Activation Studies of Silicon Implanted AlxGa1-xN and Coimplanted GaN (Paperback) (ISBN-13: 9781249595168)

A comprehensive study of the electrical activation of silicon implanted AlxGa1-xN was performed as a function ion dose, anneal temperature, and aluminum mole fraction. Also, GaN coimplanted with silicon and nitrogen was investigated. Room temperature Hall effect measurements were used to determine carrier concentration and mobility. All the samples had a 500 Å encapsulant of AlN, and were implanted at room temperature with 200 keV silicon ions at doses ranging from 1x1013 to 1x1015 cm-2. The GaN was also implanted with nitrogen under the same conditions in doses of 9x1012 to 9x1014 cm-2, respectively. The samples were annealed at temperatures ranging from 1200 to 1350 oC for 30 to 120 seconds in a flowing nitrogen environment.

This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.

This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.

As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.