Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics by Danylyuk, Yuriy

Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics (Paperback) (ISBN-13: 9783639030280)

Vendor: Yuriy Danylyuk
Product type: Books
Format: Paperback
$63.72
$63.72
$63.72
Subtotal: $63.72
Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics by Danylyuk, Yuriy

Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

$63.72
Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics by Danylyuk, Yuriy

Growth and Characterization of Al(1-x)In(x)N Films and Nanostructures - Nitrides, Epitaxy, Selfassembly and Optoelectronics

$63.72
Format: Paperback
Description
Description
x
The book contains experimental information of pseudo-epitaxial growth a series of Al(1-x)In(x)N films with thicknesses ranging from 100 nm to 8000 nm and In concentration (x) ranging from 0 to 1 on different substrates (Si, Sapphire, SiC glass) using Plasma Source Molecular Beam Epitaxy (PSMBE) techniques. Using different growth modes as the specific film morphology, the self-assembled nanostructures were created. The mechanism of carrier confinement in these structures are described. Theoretically and experimentally shown that the electron localization may exist in the nanostructures by piezoelectric field from AlN buffer layer. Optical investigation of the fundamental bandgap Eg of InxAl1-xN in the temperature range 70-700K and compositional range (0

Author: Yuriy Danylyuk
ISBN-10: 3639030281
ISBN-13: 9783639030280
Publisher: VDM Verlag Dr. Mueller E.K.
Language: English
Published: 09/10/2008
Pages: 124
Format: Paperback
Weight: 0.39lbs
Size: 9.00h x 6.00w x 0.26d

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