III-Nitride Electronic Devices: Volume 102 by Chu, Rongming

III-Nitride Electronic Devices: Volume 102 (Hardcover) (ISBN-13: 9780128175446)

Vendor: Rongming Chu
Product type: Books
Format: Hardcover
$245.00
$245.00
$245.00
Subtotal: $245.00
III-Nitride Electronic Devices: Volume 102 by Chu, Rongming

III-Nitride Electronic Devices: Volume 102

$245.00
III-Nitride Electronic Devices: Volume 102 by Chu, Rongming

III-Nitride Electronic Devices: Volume 102

$245.00
Format: Hardcover
Description
Description
x

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

Author: Rongming Chu
ISBN-10: 0128175443
ISBN-13: 9780128175446
Publisher: Academic Press
Language: English
Published: 10/18/2019
Pages: 546
Format: Hardcover
Weight: 1.96lbs
Size: 9.00h x 6.00w x 1.19d

By Rongming Chu
By Rongming Chu
x
Rongming Chu is an Associate Professor at the Electrical Engineering Department of the Pennsylvania State University. Rongming Chu did his Ph.D. study at UC-Santa Barbara, working on GaN microwave transistors. After finishing his Ph.D. in 2008, he spent two years at Transphorm Inc., then a start-up company commercializing GaN power switching technology. From 2010 to 2018, he was with HRL Laboratories as a Research Staff Member and later as a Senior Research Staff, working on GaN power device technology development. Rongming has more than 30 issued US patents and over 70 publications in the field of GaN materials, devices and circuits. He is a senior member of IEEE and served on the technical program committees of the IEEE Workshop on Wide Bandgap Power Device and Applications, the IEEE Lester Eastman Conference, and the Asia-Pacific Workshop on Wide Bandgap Semiconductors. He is a recipient of the IEEE Electron Device Society's George E. Smith Award.

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