Before you leave...
Take 20% off your first order
20% off
Enter the code below at checkout to get 20% off your first order
Discover summer reading lists for all ages & interests!
Find Your Next Read

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.
Thanks for subscribing!
This email has been registered!
Take 20% off your first order
Enter the code below at checkout to get 20% off your first order