Properties of Lattice-Matched and Strained Indium Gallium Arsenide (Paperback) (ISBN-13: 9780863416620)

The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Author: P. Bhattacharya
ISBN-10: 0863416624
ISBN-13: 9780863416620
Publisher: Institute of Electrical Engineers of Japan
Language: English
Published: 09/05/2000
Pages: 340
Format: Paperback
Weight: 1.69lbs
Size: 11.00h x 8.25w x 0.71d