Sic Materials and Devices - Volume 1 (Hardcover) (ISBN-13: 9789812568359)

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices -- power switching Schottky diodes and high temperature MESFETs -- are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Author: Sergey Rumyantsev
ISBN-10: 9812568352
ISBN-13: 9789812568359
Publisher: World Scientific Publishing Company
Language: English
Published: 07/26/2006
Pages: 344
Format: Hardcover
Weight: 1.91lbs
Size: 9.75h x 6.85w x 1.13d